概要信息：

TLP250 
2004-06-25 1
 TOSHIBA Photocoupler  GaAlAs Ired & Photo−IC 
TLP250 
 
Transistor Inverter 
Inverter For Air Conditionor 
IGBT Gate Drive 
Power MOS FET Gate Drive 
 
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a 
integrated photodetector. 
This unit is 8−lead DIP package. 
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. 
 
•  Input threshold current: IF=5mA(max.) 
•  Supply current (ICC): 11mA(max.) 
•  Supply voltage (VCC): 10−35V 
•  Output current (IO): ±1.5A (max.) 
•  Switching time (tpLH/tpHL): 1.5µs(max.) 
•  Isolation voltage: 2500Vrms(min.) 
•  UL recognized: UL1577, file No.E67349 
•  Option (D4) type 
 VDE approved: DIN VDE0884/06.92,certificate No.76823 
 Maximum operating insulation voltage: 630VPK 
 Highest permissible over voltage: 4000VPK 
(Note) When a VDE0884 approved type is needed, 
please designate the "option (D4)" 
•  Creepage distance: 6.4mm(min.) 
 Clearance: 6.4mm(min.) 
Schmatic Pin Configuration (top view) 
8
7
6
5
1 : N.C. 
2 : Anode 
3 : Cathode 
4 : N.C. 
5 : GND 
6 : VO (Output) 
7 : VO 
8 : VCC 
1
2
3
4
2+ 
VF 
IF 
3- 
ICC
(Tr 1)
VO 
GND
(Tr 2) 
IO
VO 
VCC
8
7
6
5A 0.1µF bypass capcitor must be 
connected between pin 8 and 5 (See Note 5). 
 
Truth Table 
 Tr1 Tr2 
On On Off Input 
LED Off Off On 
 
Unit in mm
 
 
TOSHIBA 11−10C4 
Weight: 0.54 g 
TLP250 
2004-06-25 2
Absolute Maximum Ratings (Ta = 25°C) 
Characteristic Symbol Rating Unit 
Forward current IF 20 mA 
Forward current derating (Ta ≥ 70°C) ∆IF / ∆Ta −0.36 mA / °C 
Peak transient forward curent                            (Note 1) IFPT 1 A 
Reverse voltage VR 5 V 
LE
D
 
Junction temperature Tj 125 °C 
“H”peak output current (PW ≤ 2.5µs,f ≤ 15kHz)              (Note 2) IOPH −1.5 A 
“L”peak output current (PW ≤ 2.5µs,f ≤ 15kHz) (Note 2) IOPL +1.5 A 
(Ta ≤ 70°C) 35 
Output voltage 
(Ta = 85°C) 
VO 
24 
V 
(Ta ≤ 70°C) 35 
Supply voltage 
(Ta = 85°C) 
VCC 
24 
V 
Output voltage derating (Ta ≥ 70°C) ∆VO / ∆Ta −0.73 V / °C 
Supply voltage derating (Ta ≥ 70°C) ∆VCC / ∆Ta −0.73 V / °C 
D
et
ec
to
r 
Junction temperature Tj 125 °C 
Operating frequency                                          (Note 3) f 25 kHz 
Operating temperature range Topr −20~85 °C 
Storage temperature range Tstg −55~125 °C 
Lead soldering temperature (10 s)                              (Note 4) Tsol 260 °C 
Isolation voltage (AC, 1 min., R.H.≤ 60%)                        (Note 5) BVS 2500 Vrms 
Note 1: Pulse width PW ≤ 1µs, 300pps 
Note 2: Exporenential wavefom 
Note 3: Exporenential wavefom, IOPH ≤ −1.0A( ≤ 2.5µs), IOPL ≤ +1.0A( ≤ 2.5µs) 
Note 4:   It is 2 mm or more from a lead root. 
Note 5: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted 
together. 
Note 6: A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high 
gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead 
length between capacitor and coupler should not exceed 1cm. 
 
Recommended Operating Conditions 
Characteristic Symbol Min. Typ. Max. Unit 
Input current, on           (Note 7) IF(ON) 7 8 10 mA 
Input voltage, off VF(OFF) 0 ― 0.8 V 
Supply voltage VCC 15 ― 30 20 V 
Peak output current IOPH/IOPL ― ― ±0.5 A 
Operating temperature Topr −20 25 70 85 °C 
Note 7: Input signal rise time (fall time) < 0.5 µs. 
TLP250 
2004-06-25 3
Electrical Characteristics (Ta = −20~70°C, unless otherwise specified) 
Characteristic Symbol 
Test 
Cir− 
cuit 
Test Condition Min. Typ.* Max. Unit 
Input forward voltage VF ― IF = 10 mA , Ta = 25°C  1.6 1.8 V 
Temperature coefficient of 
forward voltage ∆VF / ∆Ta ― IF = 10 mA  ― −2.0 ― mV / °C
Input reverse current IR ― VR = 5V, Ta = 25°C  ― 10 µA 
Input capacitance CT ― V = 0 , f = 1MHz , Ta = 25°C ― 45 250 pF 
“H” level IOPH 3 IF = 10 mA 
V8−6 = 4V −0.5 −1.5 ― 
Output current 
“L” level IOPL 2 
VCC = 30V 
(*1) IF = 0 
V6−5 = 2.5V 0.5 2 ― 
A 
“H” level VOH 4 VCC1 = +15V, VEE1 = −15V
RL = 200Ω, IF = 5mA 11 12.8 ― 
Output voltage 
“L” level VOL 5 VCC1 = +15V, VEE1 = −15V
RL = 200Ω, VF = 0.8V ― −14.2 −12.5
V 
VCC = 30V, IF = 10mA 
Ta = 25°C ― 7 ― 
“H” level ICCH ― 
VCC = 30V, IF = 10mA ― ― 11 
VCC = 30V, IF = 0mA 
Ta = 25°C   7.5   
Supply current 
“L” level ICCL ― 
VCC = 30V, IF = 0mA ― ― 11 
mA 
Threshold input 
current 
“Output 
 L→H” 
IFLH ― VCC1 = +15V, VEE1 = −15V
RL = 200Ω, VO > 0V 
― 1.2 5 mA 
Threshold input 
voltage 
“Output 
 H→L” 
IFHL ― VCC1 = +15V, VEE1 = −15V
RL = 200Ω, VO < 0V 
0.8 ― ― V 
Supply voltage VCC ―  10 ― 35 V 
Capacitance 
(input−output) 
CS ― VS = 0 , f = 1MHz 
Ta = 25℃ 
― 1.0 2.0 pF 
Resistance(input−output) RS ― VS = 500V , Ta = 25°C 
R.H.≤ 60% 1×1012 1014 ― Ω 
* All typical values are at Ta = 25°C (*1): Duration of IO time ≤ 50µs 
 
TLP250 
2004-06-25 4
Switching Characteristics (Ta = −20~70°C , unless otherwise specified) 
Characteristic Symbol 
Test 
Cir− 
cuit 
Test Condition Min. Typ.* Max. Unit
L→H tpLH ― 0.15 0.5 Propagation  
delay time H→L tpHL ― 0.15 0.5 
Output rise time tr ― ― ― 
Output fall time tf 
6 
IF = 8mA (Note 7) 
VCC1 = +15V, VEE1 = −15V 
RL = 200Ω 
― ― ― 
µs 
Common mode transient  
immunity at high level 
output 
CMH 7 VCM = 600V, IF = 8mA 
VCC = 30V, Ta = 25°C −5000 ― ― V / µs
Common mode transient  
immunity at low level  
output 
CML 7 VCM = 600V, IF = 0mA 
VCC = 30V, Ta = 25°C 5000 ― ― V / µs
* All typical values are at Ta = 25°C 
Note 7: Input signal rise time (fall time) < 0.5 µs. 
 
TLP250 
2004-06-25 5
 
Test Circuit 1 : Test Circuit 2 : IOPL 
 
Test Circuit 3 : IOPH Test Circuit 4 : VOH 
 
Test Circuit 5 : VOL 
 
 
8 
1
4
VCC
0.1µF 
IOPL 
A 
V6-5 
8
1 
4 
VCC1
0.1µF 
VOL 
VF RL 
VEE1
V 
5
1 
4 
8
8
1 
4 
VCC
0.1µF 
IOPH 
V8-6  IF 
8 
1
4
VCC1
0.1µF 
VOH V 
IF 
RL 
VEE1
A 
TLP250 
2004-06-25 6
Test Circuit 6: tpLH, tpHL, tr tf 
 
Test Circuit 7: CMH, CML 
 
 
CML(CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output 
voltage in the low (high) state. 
 
 
VEE1
VCC1
VO 
RL 
0.1µF 
8 
IF 
100Ω 
IF 
VO
VOH 
GND 
VOL 
80%
80%
tpLH tpHL 
tr tf 
VCM 
90%
VO 
600V 
CMH 
CHL 
10% tr tf 
26V 3V 
SW :A(IF=8mA) 
SW :B(IF=0) 
0.1µF 
8 
VCC 
VO
1 
4 
VCM 
+     - 
A B 
SW IF 
 
CML = 
 
CMH = 
480 (V)
tr (µs)
tf (µs)
480 (V)
TLP250 
2004-06-25 7
 
 
 
IF – VF 
Forward voltage    VF  (V) 
 
Fo
rw
ar
d 
cu
rr
en
t 
 I
F 
 (
m
A
) 
100 
1.0 
50 
30 
10 
5 
3 
1 
0.5 
0.3 
0.1 
0.05 
0.03 
0.01 
1.2 1.4 1.6 1.8 2.0 
Ta = 25 °C 
 
 IF – Ta 
Ambient temperature  Ta  (°C) 
 
A
llo
w
ab
le
 fo
rw
ar
d 
cu
rre
nt
 
I F
  
(m
A
) 
40 
0 
0 100 20 40 60 80 
10 
20 
30 
 
 VCC – Ta 
Ambient temperature  Ta  (°C) 
 
A
llo
w
ab
le
 s
up
pl
y 
vo
lta
ge
  
V
C
C
  
(V
) 
40
0
0 100 20 40 60 80 
10
20 
30 
 
 IOPH, IOPL – Ta 
Ambient Temperature  Ta  (°C) 
 
A
llo
w
ab
le
 p
ea
k 
ou
tp
ut
 c
ur
re
nt
 
I O
P
H
, I
O
P
L 
 (
A
) 
0 
0 100 20 40 60 80 
1 
2 
PW ≦ 2.5 µs, f ≦ 15 KHz
 
 ΔVF / ΔTa – IF 
Forward current    IF  (mA) 
 
Fo
rw
ar
d 
vo
lta
ge
 te
m
pe
ra
tu
re
 
co
ef
fic
ie
nt
 Δ
V
F 
/ 
Δ
Ta
 (m
V
 / 
°C
) 
-1.4
0.1 0.3 0.5 1 3 5 10 30 
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
TLP250 
2004-06-25 8
 
 
•  The information contained herein is subject to change without notice. 
•  The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed 
by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is 
granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 
•  TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in 
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility 
of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire 
system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, 
bodily injury or damage to property. 
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the 
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the 
“Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. 
•  The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal 
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products 
are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a 
malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include 
atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, 
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products 
listed in this document shall be made at the customer’s own risk. 
•  The products described in this document are subject to the foreign exchange and foreign trade laws. 
•  TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under 
any law and regulations. 
•  GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or 
dissolve chemically. 
RESTRICTIONS ON PRODUCT USE