概要信息：

4-15
File Number 2282.6
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9540, RF1S9540SM
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly Developmental Type TA17521.
Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF9540 TO-220AB IRF9540
RF1S9540SM TO-263AB RF1S9540
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet July 1999
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4-16
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9540,
RF1S9540SM UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
-19
-12
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -76 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 960 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V (Figure 10) -100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - -250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V -19 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = -10A, VGS = -10V (Figures 8, 9) - 0.150 0.200 Ω
Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON) MAX, ID = -6A
(Figure 12)
5 7 - S
Turn-On Delay Time td(ON) VDD = -50V, ID ≈19A, RG = 9.1Ω, RL = 2.3Ω,
VGS = -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 16 20 ns
Rise Time tr - 65 100 ns
Turn-Off Delay Time td(OFF) - 47 70 ns
Fall Time tf - 28 70 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT) VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
- 70 90 nC
Gate to Source Charge Qgs - 14 - nC
Gate to Drain “Miller” Charge Qgd - 56 - nC
Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
- 1100 - pF
Output Capacitance COSS - 550 - pF
Reverse Transfer Capacitance CRSS - 250 - pF
Internal Drain Inductance LD Measured From the
Contact Screw on Tab to
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die
- 4.5 - nH
Internal Source Inductance LS Measured From the
Source Lead, 6mm
(0.25in) From Package to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC - - 1 oC/W
Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 62.5 oC/W
LS
LD
G
D
S
IRF9540, RF1S9540SM
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4-17
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET Symbol
Showing the Integral Re-
verse
P-N Junction Diode
- - -19 A
Pulse Source to Drain Current
(Note 3)
ISDM - - -76 A
Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) - - -1.5 V
Reverse Recovery Time trr TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 170 - ns
Reverse Recovery Charge QRR TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 0.8 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25Ω, peak IAS = 19A. (Figures 15, 16).
G
D
S
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 1750
P
O
W
E
R
 D
IS
S
IP
A
T
IO
N
 M
U
LT
IP
L
IE
R
0
0.2
0.4
0.6
0.8
1.0
1.2
-5
0
25 75 125
I D
, D
R
A
IN
 C
U
R
R
E
N
T
 (
A
)
TC, CASE TEMPERATURE (oC)
-15
175
-10
-20
-20
t1, RECTANGULAR PULSE DURATION (s)
Z
θJ
C
, T
R
A
N
S
IE
N
T
T
H
E
R
M
A
L
 IM
P
E
D
A
N
C
E
 (
o
C
/W
)
10-3 10-2
1
10-5 10-4
0.01
   0.1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
PDM
1010-1 1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJC + TC
t1
t2
IRF9540, RF1S9540SM
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4-18
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified  (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
I D
, D
R
A
IN
 C
U
R
R
E
N
T
 (
A
)
100
100
1
101
0.1
10µs
100µs
1ms
10ms
100ms
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
BY rDS(ON)
AREA IS LIMITED
OPERATION IN THIS
500
200
I D
, D
R
A
IN
 C
U
R
R
E
N
T
 (
A
)
0 -10 -20 -30 -40
-20
-40
-60
-80
-100
-50
VGS = -16V
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = -14V
VGS = -7V
VGS = -6V
VGS = -8V
VGS = -12V
VGS = -10V
VGS = -9V
VGS = -4V
VGS = -5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I D
, D
R
A
IN
 C
U
R
R
E
N
T
 (
A
)
0 -2 -4 -6 -8
-10
-20
-30
-40
-50
-10
VGS = -16V
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = -14V
VGS = -12V
VGS = -7V
VGS = -6V
VGS = -8V
VGS = -10V
VGS = -9V
VGS = -5V
VGS = -4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0 -4 -6 -8 -10-2
-0.1
-1
-10
I D
S
(O
N
), 
D
R
A
IN
 T
O
 S
O
U
R
C
E
 C
U
R
R
E
N
T
 (
A
)
VGS, GATE TO SOURCE VOLTAGE (V)
-100
TJ = 25oC
TJ = -55oC
TJ = 125oC
-12 -14
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
r D
S
(O
N
), 
D
R
A
IN
 T
O
 S
O
U
R
C
E
 O
N
0.26
0.22
0.18
0.14
0.10
0 -20 -40 -60 -80 -100
VGS = -20V
VGS = -10V
R
E
S
IS
TA
N
C
E
 (
Ω
)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
2.0
1.5
1.0
0.5
0.2
N
O
R
M
A
L
IZ
E
D
 D
R
A
IN
 T
O
 S
O
U
R
C
E
VGS = -10V, ID = 10A
O
N
 R
E
S
IS
TA
N
C
E
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
IRF9540, RF1S9540SM
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4-19
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified  (Continued)
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
1.15
1.05
0.95
0.85
0.75
N
O
R
M
A
L
IZ
E
D
 D
R
A
IN
 T
O
 S
O
U
R
C
E
B
R
E
A
K
D
O
W
N
 V
O
LT
A
G
E
ID = 250µA
2000
400
0
0 -20 -50
C
, C
A
PA
C
IT
A
N
C
E
 (
p
F
)
1200
VDS, DRAIN TO SOURCE VOLTAGE (V)
1600
800
-10 -30 -40
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
CISS
COSS
CRSS
9
6
3
0
-20 -40
ID, DRAIN CURRENT (A)
0
15
12
-60 -80 -100
g
fs
, T
R
A
N
S
C
O
N
D
U
C
TA
N
C
E
 (
S
)
TJ = 125oC
TJ = 25oC
TJ = -55oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.4 1.0 1.2 1.6 1.80.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
0.8 1.4
0.1
1
10
I S
D
, S
O
U
R
C
E
 T
O
 D
R
A
IN
 C
U
R
R
E
N
T
 (
A
)
100
TJ = 25oC
TJ = 150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Qg(TOT), GATE CHARGE (nC)
V
G
S
, G
A
T
E
 T
O
 S
O
U
R
C
E
 (
V
)
0 20 40 60 80
-10
- 5
0
VDS = -20V
VDS = -50V
VDS = -80V
ID = -19A
IRF9540, RF1S9540SM
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4-20
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-
VDD
td(ON)
tr
90%
10%
VDS 90%
tf
td(OFF)
tOFF
90%
50%50%
10%
PULSE WIDTH
VGS
tON
10%
0
0
0.3µF
12V
BATTERY 50kΩ
+VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
-VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
0
Ig(REF)
IRF9540, RF1S9540SM
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4-21
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
IRF9540, RF1S9540SM
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