概要信息：

©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002
SS9014
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted 
Electrical Characteristics Ta=25°C unless otherwise noted 
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 100 mA
PC Collector Power Dissipation 450 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC =100µA, IE =0 50 V
BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V
BVEBO Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V
ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA
IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA
hFE DC Current Gain VCE =5V, IC =1mA 60 280 1000
VCE (sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3
VBE (sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V
VBE (on) Base-Emitter  On Voltage VCE =5V, IC =2mA 0.58 0.63 0.7 V
Cob Output Capacitance VCB =10V, IE =0
f=1MHz
2.2 3.5 pF
fT Current Gain Bandwidth Product VCE =5V, IC =10mA 150 270 MHz
NF Noise Figure VCE =5V, IC =0.2mA
f=1KHz, RS=2KΩ
0.9 10 dB
Classification A B C D
hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000
1. Emitter   2. Base   3. Collector
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW)
• High hFE  and good linearity
• Complementary to SS9015
TO-921
©2002 Fairchild Semiconductor Corporation
SS9014
Rev. A3, May 2002
Typical Characteristics 
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
0 10 20 30 40 50
0
10
20
30
40
50
60
70
80
90
100
IB = 160µA
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
I C
 [m
A]
, C
O
LL
EC
TO
R
 C
U
R
R
EN
T
VCE [V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
10
100
1000
VCE = 5V
 
 
h F
E, 
D
C
 C
U
R
R
EN
T 
G
AI
N
IC [mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
IC = 20 IB
VBE (sat)
VCE (sat)
V BE
(s
at
), 
V
CE
(s
at
)[m
V]
, S
AT
UR
AT
IO
N 
VO
LT
AG
E
IC [mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
VCE = 5V
f T[
M
H
z]
, C
U
R
R
EN
T 
G
AI
N
 B
AN
D
W
ID
TH
 P
R
O
D
U
C
T
IC [mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.
86
M
A
X
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14
.4
7 
±0
.4
0
1.
02
 ±
0.
10
(0
.2
5)
4.
58
 ±
0.
20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.
38
+0
.1
0
–0
.0
5
TO-92
Package Demensions
SS9014
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002
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As used herein:
©2002 Fairchild Semiconductor Corporation Rev. H5
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